page.parameters

#parameter file
dram capacity = 67108864;             #the unit is B
chip number[0] = 8;                   
chip number[1] = 8;
chip number[2] = 8;
chip number[3] = 8;
chip number[4] = 8;
chip number[5] = 8;
chip number[6] = 8;
chip number[7] = 8;
chip number[8] = 0;
chip number[9] = 0;
chip number[10] = 0;
chip number[11] = 0;
chip number[12] = 0;
chip number[13] = 0;
chip number[14] = 0;
chip number[15] = 0;
chip number[16] = 0;
chip number[17] = 0;
chip number[18] = 0;
channel number = 8;                    #number of channels
chip number = 64;                      #please don't change # of channels and chips if you are enabling RAID as part of code are hardcoded
die number = 1;      
plane number = 1;
block number = 4096;                
page number = 256;                  
subpage page = 8;
page capacity = 4096;
subpage capacity = 512;
t_PROG = 800000;                       #the unit is ns
t_DBSY = 50;
t_BERS = 2000000;
t_CLS = 12;
t_CLH = 5;
t_CS = 20;
t_CH = 5;
t_WP = 12;
t_ALS = 12;
t_ALH = 5;
t_DS = 12;
t_DH = 5;
t_WC = 25;
t_WH = 10;
t_ADL = 70;
t_R = 40000;
t_AR = 10;
t_CLR = 10;
t_RR = 20;
t_RP = 12;
t_WB = 100;
t_RC = 25;
t_REA = 30;
t_CEA = 45;
t_RHZ = 100;
t_CHZ = 30;
t_RHOH = 15;
t_RLOH = 5;
t_COH = 15;
t_REH = 10;
t_IR = 0;
t_RHW = 100;
t_WHR = 60;
t_RST = 5000;
erase limit = 10000;                  #record the erasure number of block
flash operating current = 25000.0;    #unit is uA
flash supply voltage = 3.3;           #voltage is 3.3V   
dram active current = 125000;         #active current of DRAM，unit is uA
dram standby current = 50000;         #standby current of DRAM，unit is uA 
dram refresh current = 5000;          #refresh current of DRAM，unit is uA
dram voltage = 3.3;                   #working voltage of DRAM，unit is V    
address mapping = 1;                  #mapping schemes，1：page；2：block；3：fast
wear leveling = 1;                    #record WL algorithm mode
gc = 1;                               #record garbage collection mode
overprovide = 0.10;                   #reserved area percentage, unavailable to users
gc threshold = 0.30;                  #GC operation begins when this threshold is reached.
buffer management = 1                 #indicates whether there is buffer management or not
scheduling algorithm = 1;             #1:FCFS recordscheduling algorithm mode, 1 means FCFS
gc hard threshold = 0.10;                
allocation = 1;                       #0 for dynamic allocation, 1 for static allocation
static_allocation = 5;                #record static allocation mode like all static allocation modes 0-5 in ICS2011 paper
dynamic_allocation = 0;               #record dynamic allocation mode, 0 for all dynamic, 1 for fixed channel and dynamic package, die, plane
advanced command = 2;                 #advanced command indicator, 0 for no advanced command, bin number 00001 for random, 00010 for copyback, 00100 for two-plane-program, 01000 for interleave, 10000 for two-plane-read, 11111 for using all；
advanced command priority = 0;        #0 for interleave is prior to two-plane, 1 for two-plane is prior to interleave
greed CB command = 1;                 #1 for using copyback command greedily, 0 for not
greed MPW command = 0;                #1 for using multi-plane write greedily, 0 for not
aged = 0;                             #1 for making SSD aged, 0 for keeping SSD non-aged
aged ratio = 0.7;                     #if we need to make SSD aged, set the aged ratio in advance
proactive read = 0;                   #read N+1, return when N completes (for sequential requests)
rotating gc = 0;
dynamic rotating gc = 0;
nonblocking gc = 0;
adaptive read = 0;                    #read N, send N+1 requests and drop 1 request based on GC status (this also enables RAID5)
raid = 0;                             #enable modified RAID5 and use modified buffer management (in which case buffer node is a RAID group instead of a single page)
tt pread = 0;                         #whether convert partial read to a RAID group read
buffer background flush = 1;